ALISO VIEJO, Calif.,
May 24, 2018 /PRNewswire/
-- Microsemi Corporation (Nasdaq: MSCC), a leading
provider of semiconductor solutions differentiated by power,
security, reliability and performance, today announced it will be
expanding its Silicon Carbide (SiC) MOSFET and SiC diode product
portfolios early next quarter, including samples of its
next-generation 1200-volt (V), 25 mOhm and 80 mOhm SiC MOSFET
devices; next-generation 700 V, 50 A Schottky barrier diode (SBD)
and corresponding die. These SiC solutions, along with other
recently announced devices in the SiC SBD/MOSFET product families,
will be demonstrated June 5-7 in hall
6, booth 318 at PCIM Europe 2018, held at the Exhibition Centre in
Nuremberg, Germany.
As Microsemi continues to expand development efforts for its SiC
product family, it has become one of the few suppliers providing a
range of Si/SiC power discrete and module solutions to the market.
These next-generation SiC MOSFETs are ideally suited for a number
of applications within the industrial and automotive markets,
including hybrid electric vehicle (HEV)/EV charging,
conductive/inductive onboard chargers (OBCs), DC-DC converters and
EV powertrain/traction control. They can also be used for switch
mode power supplies, photovoltaic (PV) inverters and motor control
in medical, aerospace, defense and data center applications.
"Fast adoption of SiC solutions for applications such as EV
charging, DC-DC converters, powertrain, medical and industrial
equipment, and aviation actuation demand a high degree of
efficiency, safety and reliability on components used in such
systems," said Leon Gross, vice
president and business unit manager for Microsemi's Power Discretes
and Modules business unit. "Microsemi's next-generation SiC MOSFET
and SiC diode families will include AEC-Q101 qualifications, which
will insure high reliability while ruggedness is demonstrated by
high repetitive unclamped inductive switching (UIS) capability at
rated current without degradation or failures."
According to market research firm Technavio, the global SiC
market for semiconductor applications is expected to reach nearly
$540.5 million by 2021, growing at a
compound annual growth rate (CAGR) of more than 18 percent. The
firm also forecasts the global SiC market for automotive
semiconductor applications at nearly 20 percent CAGR by 2021.
Microsemi is well-positioned with these trends, with its SiC MOSFET
and Schottky barrier diode devices avalanche-rated with a high
short-circuit withstand rating for robust operation, and the
capabilities necessary to enable these growing application
trends.
Microsemi's next-generation 1200 V, 25/40/80 mOhm SiC MOSFET
devices and die as well as its next-generation 1200 V and 700 V SiC
SBD devices offer customers attractive benefits in comparison to
competing Si/SiC diode/MOSFET and IGBT solutions, including more
efficient switching at higher switching frequencies as well as
higher avalanche/UIS rating and higher short-circuit withstand
rating for rugged and reliable operation. For example, SiC MOSFETs
are developed with an ideal balance of specific on-resistance, low
gate and thermal resistances, and low gate threshold voltage and
capacitance for reliable operation. Designed for high yield
processes and low parameter variation across temperature, they
operate at higher efficiency (in comparison to Si and IGBT
solutions) across high junction temperature (175 degrees Celsius)
to extend battery systems like those in HEV/EV applications.
The newly sampling devices also offer excellent gate integrity
and high gate yield as verified through high temperature reverse
bias (HTRB) and time-dependent dielectric breakdown (TBBD) tests,
which are part of its AEC-Q101 qualification in progress. Other key
features include:
- High UIS capability, offering 1.5x to 2x higher than
competitive SiC MOSFETs and GaN devices for avalanche
ruggedness;
- High short-circuit rating ranging from 1.5x to 5x higher than
competitor SiC MOSFET devices for more rugged operation;
- Up to 10x lower failure-in-time (FIT) rate than comparable Si
IGBTs at rated voltage for neutron susceptibility and with
comparable performance against SiC competition pertaining to
neutron irradiation; and
- Higher SiC power density versus
Si, enabling smaller magnetics/transformers/DC bus capacitors and
less cooling elements for more compact form factor to lower overall
system costs.
Demonstrations at PCIM June 5-7
in Hall 6, Booth 318
Microsemi's product experts will be at
the company's booth at PCIM during show hours to demonstrate its
next-generation SiC solutions, and in particular the company's
recently announced next-generation 1200 V, 40 mOhm SiC MOSFET
device and 1200V, 10/30/50A SiC diode products. For more
information or to request a meeting at the show, visit
https://www.microsemi.com/details/346-pcim-europe.
Product Availability
Microsemi's next-generation 1200
V SiC MOSFET devices and die as well as its next-generation 1200 V
and 700 V SiC SBDs are sampling now. For more information, visit
https://www.microsemi.com/product-directory/discretes/3613-silicon-carbide-sic
or contact sales.support@microsemi.com.
About Microsemi
Microsemi Corporation (Nasdaq: MSCC)
offers a comprehensive portfolio of semiconductor and system
solutions for aerospace & defense, communications, data center
and industrial markets. Products include high-performance and
radiation-hardened analog mixed-signal integrated circuits, FPGAs,
SoCs and ASICs; power management products; timing and
synchronization devices and precise time solutions, setting the
world's standard for time; voice processing devices; RF solutions;
discrete components; enterprise storage and communication
solutions, security technologies and scalable anti-tamper products;
Ethernet solutions; Power-over-Ethernet ICs and midspans; as well
as custom design capabilities and services. Microsemi is
headquartered in Aliso Viejo,
California, and has approximately 4,800 employees globally.
Learn more at www.microsemi.com.
Microsemi and the Microsemi logo are registered trademarks or
service marks of Microsemi Corporation and/or its affiliates.
Third-party trademarks and service marks mentioned herein are the
property of their respective owners.
"Safe Harbor" Statement under the Private Securities Litigation
Reform Act of 1995: Any statements set forth in this news release
that are not entirely historical and factual in nature, including
without limitation statements related to it expanding its Silicon
Carbide (SiC) MOSFET and SiC diode product portfolios early next
quarter, including samples of its next-generation 1200-volt (V), 25
mOhm and 80 mOhm SiC MOSFET devices,; next-generation 700 V, 50 A
Schottky barrier diode (SBD), and corresponding die, and its
potential effects on future business, are forward-looking
statements. These forward-looking statements are based on our
current expectations and are inherently subject to risks and
uncertainties that could cause actual results to differ materially
from those expressed in the forward-looking statements. The
potential risks and uncertainties include, but are not limited to,
such factors as rapidly changing technology and product
obsolescence, potential cost increases, variations in customer
order preferences, weakness or competitive pricing environment of
the marketplace, uncertain demand for and acceptance of the
company's products, adverse circumstances in any of our end
markets, results of in-process or planned development or marketing
and promotional campaigns, difficulties foreseeing future demand,
potential non-realization of expected orders or non-realization of
backlog, product returns, product liability, and other potential
unexpected business and economic conditions or adverse changes in
current or expected industry conditions, difficulties and costs in
implementing the company's acquisitions and divestitures strategy
or integrating acquired companies, uncertainty as to the future
profitability of acquired businesses and realization of accretion
from acquisition transactions, difficulties and costs of protecting
patents and other proprietary rights, inventory obsolescence and
difficulties regarding customer qualification of products. In
addition to these factors and any other factors mentioned elsewhere
in this news release, the reader should refer as well to the
factors, uncertainties or risks identified in the company's most
recent Form 10-K and all subsequent Form 10-Q reports filed by
Microsemi with the SEC. Additional risk factors may be identified
from time to time in Microsemi's future filings. The
forward-looking statements included in this release speak only as
of the date hereof, and Microsemi does not undertake any obligation
to update these forward-looking statements to reflect subsequent
events or circumstances.
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