Navitas’ Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging
June 06 2024 - 8:30AM
Navitas Semiconductor (Nasdaq: NVTS), the industry leader in
next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon
carbide (SiC) power semiconductors, announces their new portfolio
of Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs optimized for
fastest switching speed, highest efficiency, and increased power
density for applications such as AI data center power supplies,
on-board chargers (OBCs), fast EV roadside super-chargers, and
solar / energy-storage systems (ESS). The broad portfolio range
covers industry-standard packages from D2PAK-7 to TO-247-4,
designed for demanding, high-power, high-reliability applications.
The G3F family is optimized for high-speed switching
performance, resulting in 40% improvement to hard-switching
figures-of-merits (FOMs) compared to competition in CCM TPPFC
systems. This will enable increasing the wattage of next-generation
AI power supply units (PSUs) up to 10 kW, and power per rack
increase from 30 kW to 100-120 kW.
The G3F GeneSiC MOSFETs are developed using a
proprietary ‘trench-assisted planar’ technology and offer
better-than-trench MOSFET performance, while also providing
superior robustness, manufacturability and cost than competition.
G3F MOSFETs deliver high-efficiency with high-speed performance,
enabling up to 25°C lower case temperature, and up to 3x longer
life than SiC products from other vendors.
The ‘trench-assisted planar’ technology enables an extremely low
RDS(ON) increase versus temperature, which results in the lowest
power losses across the complete operating range and offers up to
20% lower RDS(ON) under real-life operation at high temperatures
compared to competition.
Additionally, all GeneSiC MOSFETs have the highest-published
100%-tested avalanche capability, 30% longer short-circuit
withstand time, and tight threshold voltage distributions for easy
paralleling, GeneSiC MOSFETs are ideal for high-power,
fast-time-to-market applications.
Navitas’ latest 4.5 kW high-power density AI Server PSU
reference design in CRPS185 form-factor, showcases the 650 V-rated,
40mOhms G3F FETs for an Interleaved CCM TP PFC topology. Alongside
the GaNSafe™ Power ICs in the LLC stage, a power density of 138
W/inch3 and peak efficiency above 97% is realized, which
comfortably achieves ‘Titanium Plus’ efficiency standards, now
mandatory in Europe.
For the EV market, 1,200 V/34 mOhm (G3F34MT12K) G3F FETs enable
Navitas’ new 22 kW, 800V Bi-Directional OBC and 3KW DC-DC converter
to achieve a superior power density of 3,5 kW/L and a peak
efficiency of 95.5%.
“G3F sets a new standard for efficient, cool-running SiC
performance, coupled with high-reliability and robustness for
high-power, high-stress systems,” noted Dr. Sid Sundaresan, Senior
Vice President of SiC Technology and Operations. “We’re pushing the
boundaries of SiC, with up to 600 kHz switching speeds, and
hard-switching figures-of-merit up to 40% better than
competition.”
Parts are available now to qualified customers. Please contact
sicsales@navitassemi.com for more information.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play,
next-generation power-semiconductor company, celebrating 10
years of power innovation founded in 2014. GaNFast™ power
ICs integrate gallium nitride (GaN) power and drive, with
control, sensing, and protection to enable faster charging, higher
power density, and greater energy savings.
Complementary GeneSiC™ power devices are optimized
high-power, high-voltage, and high-reliability silicon carbide
(SiC) solutions. Focus markets include EV, solar, energy storage,
home appliance / industrial, data center, mobile, and consumer.
Over 250 Navitas patents are issued or pending. Navitas was the
world’s first semiconductor company to
be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense,
GeneSiC, and the Navitas logo are trademarks or registered
trademarks of Navitas Semiconductor Limited and affiliates. All
other brands, product names, and marks are or may be trademarks or
registered trademarks used to identify products or services of
their respective owners.
Contact:
Llew Vaughan-Edmunds, Senior Director of Corporate Marketing
& Product Managementinfo@navitassemi.com
Stephen Oliver, VP of Corporate Marketing ir@navitassemi.com
A photo accompanying this announcement is available at
https://www.globenewswire.com/NewsRoom/AttachmentNg/a5982a79-e6fe-4dc3-b65c-21387cb7a9f9
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