Freescale Demonstrates Innovative CMOS Technology With Strained Silicon-on-Insulator Substrates; Breakthrough Enables New Gener
June 12 2006 - 7:00AM
Business Wire
Freescale Semiconductor (NYSE:FSL) (NYSE:FSL.B) has demonstrated an
advanced CMOS technology that utilizes strained
silicon-on-insulator (SOI) substrates -- a breakthrough that could
deliver dramatic performance improvements and reduced power
consumption for next generation semiconductor devices. Made
possible by novel hybrid strain techniques, the technology offers
the performance of SOI with the enhanced carrier mobility of
strained silicon. Transistors based on this technology exhibit
performance increases greater than 30 percent over conventional
technology. These increases can in turn reduce active power
consumption by more than 40 percent while maintaining performance
levels. "The need to control both active and standby power
consumption while continuing to improve transistor performance is
driving the industry to develop creative, non-traditional scaling
techniques," said Suresh Venkatesan, Freescale's director of Austin
Silicon Technology Solutions. "Freescale is breaking new ground by
incorporating innovative materials, structures and processes into
our transistor roadmap as evidenced by this strained SOI technology
breakthrough." Freescale is evaluating the technology for the 45-nm
node and beyond. Initial applications for strained SOI from
Freescale may include power-sensitive and high-performance products
such as advanced networking equipment and gaming consoles. The
technology could also eventually help Freescale's customers create
dramatically smaller and more powerful entertainment electronics
and intelligent portable devices. "Semiconductor companies must
increasingly rely on creative R&D to meet growing demand for
higher performance devices that require less power," said Joanne
Itow, Semico Research Corporation's managing director for
manufacturing. "Freescale's breakthrough represents a significant
milestone for both SOI and strained silicon technology, and serves
as a prime example of how creative innovation is helping top
semiconductor companies meet stringent marketplace expectations and
requirements." Freescale is an established leader in SOI techniques
and one of the few companies currently manufacturing products based
on the technology. About Freescale's Hybrid Strain CMOS
Breakthrough CMOS compatible hybrid strained SOI technology from
Freescale is demonstrated through an advanced method of selective
biaxial-uniaxial strain hybridization. With this mixed strain
approach, the nFET uniaxial strain can be amplified by the
substrate, while the pFET can be enhanced beyond levels offered by
conventional uniaxially strained silicon. This technology enables
CMOS performance scaling to the 45-nm node and beyond. The
technology successfully integrates strong SOI substrate-level
strain with process-induced stressors, demonstrating drive
performance boosts of up to 36 percent while simultaneously
reducing gate leakage by 30 percent. This high performance-per-watt
strained SOI technology widens the window for implementing active
and standby power reduction techniques required for
high-performance, power-sensitive applications. Freescale is
scheduled to present a technical paper outlining this breakthrough
at the 2006 VLSI Symposium on Technology in Honolulu, Hawaii, from
June 13-16. About Freescale Semiconductor Freescale Semiconductor
Inc. (NYSE:FSL) (NYSE:FSL.B) is a global leader in the design and
manufacture of embedded semiconductors for the automotive,
consumer, industrial, networking and wireless markets. Freescale
became a publicly traded company in July 2004 after more than 50
years as part of Motorola Inc. The company is based in Austin,
Texas, and has design, research and development, manufacturing or
sales operations in more than 30 countries. Freescale, a member of
the S&P 500(R), is one of the world's largest semiconductor
companies with 2005 sales of $5.8 billion (USD). www.freescale.com
Freescale Technology Forum The Freescale Technology Forum (FTF) is
fast becoming the embedded semiconductor industry's premier
developer conference. A global program, FTF events feature
visionary keynote speakers, in-depth technical training, and
interactive demonstrations from Freescale and leading hardware,
software and tools providers. For detailed information about FTF
events around the world, please go to www.freescale.com/ftf. Reader
Inquiry Response: Freescale Semiconductor P.O. Box 17927 Denver, CO
80217 USA Freescale (TM) and the Freescale logo are trademarks of
Freescale Semiconductor Inc. All other product or service names are
the property of their respective owners. (C) Freescale
Semiconductor Inc. 2006.
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