Freescale Achieves Breakthrough in Cost-Effective Plastic Packaging for High-Power RF Transistors
June 13 2006 - 8:00AM
Business Wire
RF Devices in Over-Molded Plastic Package Designed to Perform on
Par with Air-Cavity Package at 2 GHz, Reduce Amplifier Cost and
Streamline Automated Assembly Freescale Semiconductor (NYSE:FSL)
(NYSE:FSL.B) today has introduced the industry's first 2 GHz
high-power RF transistors housed in over-molded plastic packages
that deliver performance comparable to air-cavity flange packages.
The advanced devices will be based on the company's high-voltage,
seventh-generation (HV7) RF Laterally Diffused Metal Oxide
Semiconductor (LDMOS) technology. This advanced RF technology is
designed to give designers of cellular infrastructure the ability
to significantly reduce the cost of base station amplifiers, which
are the most expensive elements of wireless systems, while
maintaining the stringent performance requirements. Freescale's
flagship HV7 device is the MRF7S19120N available in a TO-270 WBL-4
package. The MRF7S19120N delivers a minimum of 120 W P1dB and 36 W
average with typical performance anticipated to be 18 dB gain, 32
percent efficiency and -37.5 dBc linearity at PAR=6.1dB (tested
with single-carrier W-CDMA signal with PAR=7.5dB @ 0.01 percent
probability on CCDF). A corresponding family of 2.1GHz products is
planned to be released in Q3 2006. The MRF7S19120N is the first
transistor to deliver comparable performance at 1.9 GHz with a
minimum output power of 120 W CW. When compared to its air-cavity
counterparts, the achieved performance is equivalent in every
electrical parameter. Ceramic air-cavity packages have been used
exclusively for decades to house high-power RF power transistors.
They are inherently able to withstand and dissipate the high heat
levels generated by the transistor, and they do not significantly
degrade performance over that of the bare transistor die.
"Freescale is committed to complementing our air-cavity-packaged
devices with cost-effective over-molded plastic models that deliver
exceptional performance," said Gavin Woods, vice president and
general manager of Freescale's RF Division. "Over-molded
plastic-packaged devices can be much less expensive on a per unit
basis than comparable devices in air-cavity packages, which
provides a significant cost benefit to amplifier manufacturers. In
addition, over-molded plastic devices simplify our customer's
manufacturing process by enabling a more efficient automated
assembly, which can contribute additional cost savings." Freescale
has manufactured over-molded plastic-packaged RF devices with
parity performance up to 1 GHz for many years. However, achieving 2
GHz performance in over-molded plastic-packages identical to that
of air-cavity packages requires complex design techniques and
extensive work to overcome technology and materials limitations.
Pricing and Availability Samples of Freescale's MRF7S19120N are
available now, and full production is expected to begin in Q4 2006.
For further information on Freescale's HV7 LDMOS technology,
over-molded plastic packaging and the advanced RF devices, visit
www.freescale.com/rf. About Freescale Semiconductor Freescale
Semiconductor, Inc. (NYSE:FSL) (NYSE:FSL.B) is a global leader in
the design and manufacture of embedded semiconductors for the
automotive, consumer, industrial, networking and wireless markets.
Freescale became a publicly traded company in July 2004 after more
than 50 years as part of Motorola, Inc. The company is based in
Austin, Texas, and has design, research and development,
manufacturing or sales operations in more than 30 countries.
Freescale, a member of the S&P 500(R), is one of the world's
largest semiconductor companies with 2005 sales of $5.8 billion
(USD). www.freescale.com -0- *T Reader Inquiry Response: Freescale
Semiconductor P.O. Box 17927 Denver, CO 80217 USA *T Freescale(TM)
and the Freescale logo are trademarks of Freescale Semiconductor,
Inc. All other product or service names are the property of their
respective owners. (C) Freescale Semiconductor, Inc. 2006.
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