New Infineon MOSFET Families Reduce Power Losses by Up to 30 Percent in Industrial, Consumer, Telecommunications Applications
February 25 2008 - 8:00AM
Marketwired
NEUBIBERG, GERMANY and AUSTIN, TX today, Infineon Technologies
AG (FRANKFURT: IFX) (NYSE: IFX) announced that it has added three
new families of power semiconductors to its extensive OptiMOS(TM) 3
N-channel MOSFET portfolio. The OptiMOS 3 40V, 60V and 80V families
offer industry-leading performance in such key power conversion
metrics as on-state resistance, which allows them to reduce power
losses by as much as 30 percent in a given standard TO (Transistor
Outline) package. The low switching losses and on-state resistance
of the OptiMOS 3 40V, 60V and 80V families enable an increase in
power densities by up to 30 percent, and a reduction in part count
for a given application of more than 25 percent, compared to
competitive solutions.
The new MOSFETs are intended for a variety of power conversion
and management applications, including SMPSs (switched-mode power
supplies), DC/DC converters and DC motor drives in computers, home
appliances, small electric vehicles, industrial automation systems,
telecommunications equipment and such consumer devices as power
tools, electric lawnmowers and fans.
The new OptiMOS 3 families include MOSFETs that offer
best-in-class RDS(on) (on-state resistance), achieving an RDS(on)
as low as 1.6 m(omega) for 40V products in SuperSO8(TM) packages,
3.5 m(omega) for 60V products in D-PAK packages and 2.5 m(omega)
for 80V products in D2-PAK packages. The FOM (figure of merit,
calculated as on-state resistance times gate charge) of these
devices is as much as 25 percent better than that of their closest
competitors, and enables fast switching while minimizing conduction
losses and on-state power dissipation, allowing higher power
densities. It also results in less heat generation in the driver
and, therefore, improved system reliability. In addition, the low
RDS(on) allows the use of smaller packages, such as the 3 mm x 3 mm
S3O8 (Shrink SuperSO8), so less space is required in a design,
thereby increasing power density.
"As a worldwide market leader in power semiconductors, Infineon
designs its extensive OptiMOS MOSFET families to enable optimum
performance and efficiency in low-voltage power conversion and
management applications," said Gerhard Wolf, Director at Power
Management and Drives Business Unit of Infineon Technologies. "Our
leadership in power semiconductor manufacturing and packaging
technologies allows us to continuously improve performance while
decreasing device footprints, which results in increased power
densities and excellent price/performance ratios. The new OptiMOS 3
families provide best-in-class efficiency and switching
characteristics that will help power supply and motor designers
meet increasingly stringent energy-saving requirements while
maintaining the high performance levels that users demand."
OptiMOS 3 40V, 60V, 80V product details
The OptiMOS 3 40V family meets the needs of fast-switching SMPSs
and DC/DC converters in a variety of applications, such as
printers, non-isolated industrial converters and isolated DC/DC
converters, in which 30V MOSFETs do not offer sufficient breakdown
voltage. It has RDS(on) as low as 1.6 m(omega) in a SuperSO8
package, which is more than 50 percent below that of its closest
competitor. This is combined with a thermal resistance of 1� K/W
and a continuous current rating of 100 A to set a new standard for
low-ohmic MOSFETs in the 40 V class. The family also includes the
industry's first 40V breakdown voltage MOSFET to be available in an
S3O8 package, which represents a 60 percent footprint reduction
over standard SO8 or SuperSO8 devices.
The OptiMOS 3 60V and 80V families are primarily intended for
secondary side rectification in SMPSs and in motor controls and
drives for DC/DC brushless and brushed motors. The 80V devices are
also ideally suited to telecommunications applications. The new
MOSFETs offer best-in-class RDS(on); e.g., the OptiMOS 3 80V
achieves 2.8 m(omega) in a TO-220 package, while the closest
competitor gets no lower than 3.3 m(omega). This low RDS(on) is
linked with a thermal resistance of 0.5� K/W and an unrestricted
continuous current rating of 100 A to establish the new Infineon
MOSFETs as the leaders in the 60 V and 80 V classes. They are also
available in D-PAK packages that reduce the required board space by
more than 50 percent compared to conventional D2-PAK packages, and
provide a package-height reduction of 40 percent in SMPS
designs.
Availability and Pricing
The new OptiMOS 3 40V, 60V and 80V power MOSFET families are
available in all of the standard TO-type package types, as well as
in SuperSO8 and S3O8 packages, with a range of RDS(on) figures.
Members of the OptiMOS 3 60V family are now available in production
quantities, and 40V and 80V devices are currently being sampled. In
10,000-piece quantities, the best-in-class OptiMOS 3 40V, with
RDS(on) of 1.6 m(omega) in an SSO8 package, is priced at less than
$0.99 (Euro 0.68). In the same quantities, a 3.5 m(omega) OptiMOS 3
60V in a D-PAK package is $0.99 (Euro 0.68), and a 2.8 m(omega)
OptiMOS 3 80V in a TO-220 package is $1.99 (Euro 1.37).
Infineon is showing its new families of OptiMOS 3 power
semiconductors in Booth #611 at the Applied Power Electronics
Conference, February 24 - 28, 2008, in Austin, Texas.
For further information please turn to
www.infineon.com/powermosfets and www.infineon.com/optimos
About Infineon Infineon Technologies AG, Neubiberg, Germany,
offers semiconductor and system solutions addressing three central
challenges to modern society: energy efficiency, communications,
and security. In the 2007 fiscal year (ending September), the
company reported sales of Euro 7.7 billion (including Qimonda sales
of Euro 3.6 billion) with approximately 43,000 employees worldwide
(including approximately 13,500 Qimonda employees). With a global
presence, Infineon operates through its subsidiaries in the U.S.
from Milpitas, CA, in the Asia-Pacific region from Singapore, and
in Japan from Tokyo. Infineon is listed on the Frankfurt Stock
Exchange and on the New York Stock Exchange (ticker symbol:
IFX).
Further information is available at www.infineon.com.
This news release is available online at
www.infineon.com/press/
Contacts: Worldwide Headquarters Monika Sonntag +49 89 234 24497
monika.sonntag@infineon.com U.S.A. Agnes Toan +1 408 503 2587
agnes.toan@infineon.com Asia Chi Kang David Ong +65 6876 3070
david.ong@infineon.com Japan Hirotaka Shiroguchi +81 3 5745 7340
hirotaka.shiroguchi@infineon.com Investor Relations EU/APAC/USA/CAN
+49 89 234 26655 investor.relations@infineon.com
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