New Infineon RF Power Transistors Offer Highest Peak Power in 700 MHz Band
June 17 2008 - 2:56PM
Marketwired
NEUBIBERG, GERMANY and ATLANTA, GA (NYSE: IFX), a leading
supplier of communication ICs and solutions, announced a new family
of RF power transistors specifically targeted at wireless
infrastructure applications in the 700 MHz frequency band. This
band will be used in the U.S. to introduce 4G (fourth-generation)
cellular, mobile TV broadcast and other mobile broadband-based
services, including LTE (Long Term Evolution), the next-generation
wireless network standard. Extending Infineon's broad portfolio of
RF power transistors, the new family includes a 55 W driver and two
output stage transistors (170 W and 240 W), offering the industry's
highest peak power in the 700 MHz band.
Based on Infineon's advanced LDMOS (laterally diffused
metal-oxide semiconductor) process technology, the new devices
feature internal input and output broadband matching and high
linearity, which simplifies amplifier design. They are ideal for
use in Doherty amplifiers, in which parallel carrier and peaking
stages combine to achieve higher efficiency. Doherty amplifiers are
becoming increasingly popular in cellular telephone and
wireless-Internet system designs.
"Consumers are increasingly demanding that the wireless networks
they use provide the same experience and applications that they
enjoy from fixed wireline connections," said Helmut Vogler, Vice
President and General Manager for RF Power, Infineon Technologies.
"Networks operating in the 700 MHz band will allow migration of
Internet applications from fixed to mobile connections, including
Voice-over-IP, video streaming, music downloading and mobile TV.
Our new 700 MHz RF power transistors will help build the
infrastructure needed to support the demands of a new generation of
consumer devices tailored to the new mobile applications."
Device Details
Typical 2-tone PEP (Peak Envelope Power) performance with a 28 V
supply voltage for Infineon's PTFA070551E/PTFA070551F 55 W FETs
includes 18.5 dB gain and 48 percent efficiency. For the
PTFA071701GH/PTFA071701HL 170 W FETs, gain is 18 dB gain and
efficiency is 40 percent.
With a 30 V supply, typical 2-tone PEP performance of the
PTFA072401E/ PTFA072401F 240 W LDMOS transistors includes 18 dB
gain and 40 percent efficiency.
All of the products are available in lead-free, RoHS-compliant,
thermally enhanced, open-cavity packages with slotted or earless
flanges, and are capable of handling a 10:1 VSWR (voltage standing
wave ratio) at CW (continuous wave) power output.
Availability
Samples of the new 700 MHz RF power transistors are now
available, with production scheduled for the fourth quarter of
2008. Infineon is showing its new family of 700 MHz LDMOS RF power
transistors in Booth #1216 at the IEEE MTT-S International
Microwave Symposium, June 16 - 19, 2008, in Atlanta, Georgia.
About Infineon
Infineon Technologies AG, Neubiberg, Germany, offers
semiconductor and system solutions addressing three central
challenges to modern society: energy efficiency, communications,
and security. In the 2007 fiscal year (ending September), the
company reported sales of Euro 7.7 billion (including Qimonda sales
of Euro 3.6 billion) with approximately 43,000 employees worldwide
(including approximately 13,500 Qimonda employees). With a global
presence, Infineon operates through its subsidiaries in the U.S.
from Milpitas, CA, in the Asia-Pacific region from Singapore, and
in Japan from Tokyo. Infineon is listed on the Frankfurt Stock
Exchange and on the New York Stock Exchange (ticker symbol:
IFX).
Further information is available at www.infineon.com.
This news release is available online at
www.infineon.com/press/
Media Relations Technology: Worldwide Headquarters Christoph von
Schierstaedt +49 89 234 22984 vonschierstaedt@infineon.com U.S.A.
Agnes Toan +1 408 503 2587 agnes.toan@infineon.com Asia Chi Kang
David Ong +65 6876 3070 david.ong@infineon.com Japan Hirotaka
Shiroguchi +81 3 5745 7340 hirotaka.shiroguchi@infineon.com
Investor Relations EU/APAC/USA/CAN +49 89 234 26655
investor.relations@infineon.com
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